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SN74ABTH25245NT
Texas Instruments

SN74ABTH25245NT

State-of-the-ArtEPIC-II BTM BiCMOS Design Significantly Reduces Power Dissipation ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0) Latch-Up Performance Exceeds 500 mA Per JEDEC Standard JESD-17 Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C High-Impedance State During Power Up and Power Down Designed to Facilitate Incident-Wave Switching for Line Impedances of 25 or Greater Distributed VCC and GND Pin Configuration Minimizes High-Speed Switching Noise Bus Hold on Data Inputs Eliminates the Need for External Pullup/Pulldown Resistors Package Options Include Plastic Small-Outline (DW) Package, Ceramic Chip Carriers (FK), and Standard Plastic (NT) and Ceramic (JT) DIPs
中间价(CNY):42.8563
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SN74ABTH25245NT 规格参数
Product Attributes Select All
Other Names296-4144-5 SN74ABTH25245NTE4 SN74ABTH25245NTE4-ND
Operating Temperature-40°C ~ 85°C (TA)
Input Type-
CategoryIntegrated Circuits (ICs)
DatasheetsSN54/74ABTH25245
Number of Bits per Element8
Output TypePush-Pull
Logic TypeTransceiver, Non-Inverting
Mounting TypeThrough Hole
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