| Typical Input Capacitance @ Vds (pF) | 3900@30V |
| Configuration | Single |
| Typical Turn-Off Delay Time (ns) | 24.2 |
| PCB changed | 3 |
| HTS | 8541.29.00.95 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Number of Elements per Chip | 1 |
| ECCN (US) | EAR99 |
| Typical Rise Time (ns) | 5.3 |
| Maximum Power Dissipation (mW) | 216000 |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time (ns) | 7.8 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Supplier Package | TO-220 |
| Maximum IDSS (uA) | 1 |
| Typical Fall Time (ns) | 5.6 |
| Process Technology | NexFET |
| Package Height | 9.25(Max) |
| Channel Type | N |
| EU RoHS | Compliant with Exemption |
| Maximum Continuous Drain Current (A) | 169 |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Resistance (mOhm) | 4.2@10V |
| Material | Si |
| Package Length | 10.36(Max) |
| Typical Gate Charge @ 10V (nC) | 44 |
| Pin Count | 3 |
| Mounting | Through Hole |
| Tab | Tab |
| Part Status | Active |
| Product Category | Power MOSFET |
| Packaging | Tube |
| Maximum Gate Threshold Voltage (V) | 2.2 |
| Package Width | 4.7(Max) |
| Typical Gate Charge @ Vgs (nC) | 44@10V|21@4.5V |
