| Product Attributes Select All |
Input Capacitance (Ciss) @ Vds | 3100pF @ 12.5V |
PCN Assembly/Origin | Qualification Assembly/Test Site 03/Mar/2014 Qualification Wire Bond 27/May/2014 Assembly/Test Site Revision C 09/Feb/2015 |
Category | Discrete Semiconductor Products |
Online Catalog | N-Channel Standard FETs |
Gate Charge (Qg) @ Vgs | 19nC @ 4.5V |
FET Type | MOSFET N-Channel, Metal Oxide |
Supplier Device Package | 8-VSON (5x6) |
PCN Design/Specification | Qualification Revision A 01/Jul/2014 |
Drain to Source Voltage (Vdss) | 25V |
Package / Case | 8-PowerTDFN |
Video File | NexFET Power Block PowerStack™ Packaging Technology Overview |
Manufacturer | Texas Instruments |
Other Names | 296-24517-6 |
Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | Standard |
Datasheets | CSD16321Q5 |
Product Training Modules | NexFET MOSFET Technology |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 2.4 mOhm @ 25A, 8V |
Vgs(th) (Max) @ Id | 1.4V @ 250µA |
Standard Package | 1 |
Series | NexFET™ |
Power - Max | 3.1W |
Featured Product | Create your power design now with TI’s WEBENCH® Designer |
Manufacturer Product Page | CSD16321Q5 Specifications |
Packaging | Digi-Reel® |
Part Status | Active |
Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 100A (Tc) |
Family | Transistors - FETs, MOSFETs - Single |