|  | Product Attributes Select All | 
| Input Capacitance (Ciss) @ Vds | 3100pF @ 12.5V | 
| PCN Assembly/Origin | Qualification Assembly/Test Site 03/Mar/2014 Qualification Wire Bond 27/May/2014 Assembly/Test Site Revision C 09/Feb/2015 | 
| Category | Discrete Semiconductor Products | 
| Online Catalog | N-Channel Standard FETs | 
| Gate Charge (Qg) @ Vgs | 19nC @ 4.5V | 
| FET Type | MOSFET N-Channel, Metal Oxide | 
| Supplier Device Package | 8-VSON (5x6) | 
| PCN Design/Specification | Qualification Revision A 01/Jul/2014 | 
| Drain to Source Voltage (Vdss) | 25V | 
| Package / Case | 8-PowerTDFN | 
| Video File | NexFET Power Block PowerStack™ Packaging Technology Overview | 
| Manufacturer | Texas Instruments | 
| Other Names | 296-24517-6 | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| FET Feature | Standard | 
| Datasheets | CSD16321Q5 | 
| Product Training Modules | NexFET MOSFET Technology | 
| Mounting Type | Surface Mount | 
| Rds On (Max) @ Id, Vgs | 2.4 mOhm @ 25A, 8V | 
| Vgs(th) (Max) @ Id | 1.4V @ 250µA | 
| Standard Package | 1 | 
| Series | NexFET™ | 
| Power - Max | 3.1W | 
| Featured Product | Create your power design now with TI’s WEBENCH® Designer | 
| Manufacturer Product Page | CSD16321Q5 Specifications | 
| Packaging | Digi-Reel® | 
| Part Status | Active | 
| Current - Continuous Drain (Id) @ 25°C | 31A (Ta), 100A (Tc) | 
| Family | Transistors - FETs, MOSFETs - Single |