| Typical Gate Charge @ Vgs | 230 nC @ -10 V |
| Category | Power MOSFET |
| Configuration | Single |
| Maximum Gate Source Voltage | ±20 V |
| Typical TurnOff Delay Time | 200 ns |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | -60 V |
| Channel Mode | Enhancement |
| Forward Diode Voltage | -1.5 V |
| Channel Type | P |
| Height | 4.826 mm |
| Maximum Operating Temperature | +175 °C |
| Width | 9.652 mm |
| Typical Turn On Delay Time | 20 ns |
| Operating Temperature Range | -55 to +175 °C |
| Dimensions | 10.414 x 9.652 x 4.826 mm |
| Mounting Type | Surface Mount |
| Maximum Drain Source Resistance | 0.0138 Ω |
| Minimum Operating Temperature | -55 °C |
| Pin Count | 3 |
| Typical Input Capacitance @ Vds | 11400 pF @ -25 V |
| Package Type | TO-263 |
| Forward Transconductance | 20 S |
| Length | 10.414 mm |
| Maximum Power Dissipation | 375 W |
| Maximum Continuous Drain Current | -95 A |
