Typical Gate Charge @ Vgs | 18 nC @ 10 V |
Category | Power MOSFET |
Configuration | Quad Drain, Triple Source |
Maximum Gate Source Voltage | ±20 V |
Typical TurnOff Delay Time | 25 ns |
Number of Elements per Chip | 1 |
Maximum Drain Source Voltage | 60 V |
Channel Mode | Enhancement |
Forward Diode Voltage | 1.2 V |
Channel Type | N |
Height | 1.07 mm |
Maximum Operating Temperature | +150 °C |
Width | 5 mm |
Typical Turn On Delay Time | 10 ns |
Operating Temperature Range | -55 to +150 °C |
Dimensions | 5.99 x 5 x 1.07 mm |
Mounting Type | Surface Mount |
Maximum Drain Source Resistance | 0.031 Ω |
Minimum Operating Temperature | -55 °C |
Pin Count | 8 |
Package Type | PowerPAK-SO-8 |
Forward Transconductance | 26 S |
Length | 5.99 mm |
Maximum Power Dissipation | 1.8 W |
Maximum Continuous Drain Current | 6.2 A |