SI4946BEY-T1-E3 规格参数
Current, Drain | 6.5 A |
Typical Gate Charge @ Vgs | 17 nC @ 10 V |
Polarization | N-Channel |
Capacitance, Input | 840 pF @ 30 V |
Configuration | Dual Gate, Dual Source, Quad Drain |
Voltage, Gate to Source | ±20 V |
Temperature, Operating, Range | -55 to +175 °C |
Number of Elements per Chip | 2 |
Resistance, Drain to Source On | 0.052 Ω |
Temperature, Operating, Maximum | +175 °C |
Channel Mode | Enhancement |
数据手册
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