Siliconix

SI4925BDY-T1-E3

DUAL P-CHANNEL 30-V (D-S) MOSFET

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SI4925BDY-T1-E3 规格参数

Current, Drain	-4.3 A
Typical Gate Charge @ Vgs	33 nC @ -10 V
Polarization	P-Channel
Configuration	Dual Gate, Dual Source, Quad Drain
Voltage, Gate to Source	±20 V
Temperature, Operating, Range	-55 to +150 °C
Number of Elements per Chip	2
Resistance, Drain to Source On	0.041 Ω
Temperature, Operating, Maximum	+150 °C
Gate Charge, Total	33 nC
Channel Type	P
Number of Pins	8
Height	0.061" (1.55mm)
Width	0.157" (4mm)
Voltage, Forward, Diode	-1.2 V
Dimensions	5 x 4 x 1.55 mm
Time, Turn-Off Delay	12 ns
Mounting Type	Surface Mount
Time, Turn-On Delay	9 ns
Temperature, Operating, Minimum	-55 °C
Package Type	SO-8
Power Dissipation	1.1 W
Series	SI49 Series
Length	0.196" (5mm)
Transconductance, Forward	20 S
Voltage, Drain to Source	-30 V
Voltage, Breakdown, Drain to Source	-30 V
Thermal Resistance, Junction to Ambient	85 °C/W
Temperature, Operating	-55 to 150 °C

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