Siliconix

SI4922BDY-T1-E3

MOSFET; Dual N-Channel 30-V (D-S)

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SI4922BDY-T1-E3 规格参数

Current, Drain	8 A
Typical Gate Charge @ Vgs	41 nC @ 10 V
Polarization	N-Channel
Capacitance, Input	2070 pF @ 15 V
Configuration	Dual Gate, Dual Source, Quad Drain
Voltage, Gate to Source	±12 V
Temperature, Operating, Range	-50 to +150 °C
Number of Elements per Chip	2
Resistance, Drain to Source On	0.024 Ω
Temperature, Operating, Maximum	+150 °C
Gate Charge, Total	41 nC
Channel Type	N
Number of Pins	8
Height	0.061" (1.55mm)
Width	0.157" (4mm)
Voltage, Forward, Diode	1.2 V
Dimensions	5 x 4 x 1.55 mm
Time, Turn-Off Delay	68 ns
Mounting Type	Surface Mount
Time, Turn-On Delay	13 ns
Temperature, Operating, Minimum	-50 °C
Package Type	SO-8
Power Dissipation	3.1 W
Series	SI49 Series
Length	0.196" (5mm)
Transconductance, Forward	30 S
Voltage, Drain to Source	30 V
Voltage, Breakdown, Drain to Source	30 V
Thermal Resistance, Junction to Ambient	50 °C/W
Temperature, Operating	-50 to 150 °C

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