Siliconix

SI4920DY-T1-E3

MOSFET; Dual N-Channel, 30V (D-S

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SI4920DY-T1-E3 规格参数

Typical Gate Charge @ Vgs	15 nC @ 5 V
Category	Power MOSFET
Configuration	Dual Gate, Dual Source, Quad Drain
Maximum Gate Source Voltage	±20 V
Typical TurnOff Delay Time	60 ns
Number of Elements per Chip	2
Maximum Drain Source Voltage	30 V
Channel Mode	Enhancement
Forward Diode Voltage	1.2 V
Channel Type	N
Height	1.55 mm
Maximum Operating Temperature	+150 °C
Width	4 mm
Typical Turn On Delay Time	12 ns
Operating Temperature Range	-55 to +150 °C
Dimensions	5 x 4 x 1.55 mm
Mounting Type	Surface Mount
Maximum Drain Source Resistance	0.035 Ω
Minimum Operating Temperature	-55 °C
Pin Count	8
Package Type	SO-8
Forward Transconductance	25 S
Length	5 mm
Maximum Power Dissipation	2 W
Maximum Continuous Drain Current	±6.9 A

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