Siliconix

SI4888DY-T1-E3

MOSFET; Power; N-Ch; VDSS 30V; RDS(ON) 0.0058Ohm; ID 11A; SO-8; PD 1.6W; VGS +/-20V; -55

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SI4888DY-T1-E3 规格参数

Current, Drain	11 A
Typical Gate Charge @ Vgs	16.3 nC @ 15 V
Polarization	N-Channel
Configuration	Quad Drain, Triple Source
Voltage, Gate to Source	±20 V
Temperature, Operating, Range	-55 to +150 °C
Number of Elements per Chip	1
Resistance, Drain to Source On	0.01 Ω
Temperature, Operating, Maximum	+150 °C
Gate Charge, Total	16.3 nC
Channel Type	N
Number of Pins	8
Height	0.061" (1.55mm)
Width	0.157" (4mm)
Voltage, Forward, Diode	0.74 V
Dimensions	5 x 4 x 1.55 mm
Time, Turn-Off Delay	44 ns
Product Header	TrenchFET® Power MOSFET
Mounting Type	Surface Mount
Time, Turn-On Delay	14 ns
Temperature, Operating, Minimum	-55 °C
Package Type	SO-8
Power Dissipation	1.6 W
Series	SI48 Series
Length	0.196" (5mm)
Transconductance, Forward	38 S
Voltage, Drain to Source	30 V
Voltage, Breakdown, Drain to Source	30 V

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