| Typical Gate Charge @ Vgs | 12.5 nC @ -4.5 V |
| Category | Power MOSFET |
| Configuration | Single |
| Maximum Gate Source Voltage | ±8 V |
| Typical TurnOff Delay Time | 71 ns |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | -20 V |
| Channel Mode | Enhancement |
| Forward Diode Voltage | -1.2 V |
| Channel Type | P |
| Height | 1.02 mm |
| Maximum Operating Temperature | +150 °C |
| Width | 1.4 mm |
| Typical Turn On Delay Time | 25 ns |
| Operating Temperature Range | -55 to +150 °C |
| Dimensions | 3.04 x 1.4 x 1.02 mm |
| Mounting Type | Surface Mount |
| Maximum Drain Source Resistance | 0.068 Ω |
| Minimum Operating Temperature | -55 °C |
| Pin Count | 3 |
| Typical Input Capacitance @ Vds | 1020 pF @ -10 V |
| Package Type | TO-236 |
| Forward Transconductance | 16 S |
| Length | 3.04 mm |
| Maximum Power Dissipation | 0.75 W |
| Maximum Continuous Drain Current | -2.9 A |
