SI2308BDS-T1-GE3 规格参数
| Current, Drain | 2.3 A |
| Typical Gate Charge @ Vgs | 4.5 nC @ 10 v |
| Capacitance, Input | 190 pF @ 30 v |
| Temperature Operating Range | -55 to +150 °C |
| Configuration | Single |
| Voltage, Gate to Source | ±20 V |
| Resistance, Drain to Source On | 0.192 Ω |
| Number of Elements per Chip | 1 |
| Number of Pins | 3 |
| Channel Type | N |
| Height | 0.04" (1.02mm) |
数据手册
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