| Current, Drain | 300 mA |
| Typical Gate Charge @ Vgs | 0.4 nC @ 10 V |
| Polarization | N-Channel |
| Capacitance, Input | 30 pF @ 25 V |
| Configuration | Single |
| Voltage, Gate to Source | ±20 V |
| Temperature, Operating, Range | -55 to +150 °C |
| Number of Elements per Chip | 1 |
| Resistance, Drain to Source On | 4 Ω |
| Temperature, Operating, Maximum | +150 °C |
| Channel Mode | Enhancement |
| Gate Charge, Total | 0.4 nC |
| Channel Type | N |
| Number of Pins | 3 |
| Height | 1.02 mm |
| Width | 1.4 mm |
| Voltage, Forward, Diode | 1.3 V |
| Voltage, Diode Forward | 1.3 V |
| Dimensions | 3.04 x 1.4 x 1.02 mm |
| Time, Turn-Off Delay | 35 ns |
| Mounting Type | Surface Mount |
| Time, Turn-On Delay | 25 ns |
| Temperature, Operating, Minimum | -55 °C |
| Package Type | TO-236 |
| Power Dissipation | 0.35 W |
| Operating and Storage Temperature | –55 to +150 °C |
| Length | 3.04 mm |
| Transconductance, Forward | 100 mS |
| Voltage, Drain to Source | 60 V |
| Voltage, Breakdown, Drain to Source | 60 V |
| Brand/Series | TrenchFET® Series |
