| Number of Channels per Chip | 1 |
| Fabrication Technology | NPN Transistor |
| PCB changed | 2 |
| Maximum Collector-Emitter Voltage (V) | 35 |
| ECCN (US) | EAR99 |
| Maximum Power Dissipation (mW) | 75 |
| Minimum Operating Temperature (°C) | -25 |
| Maximum Operating Temperature (°C) | 85 |
| Supplier Package | Thin Type |
| Phototransistor Type | Phototransistor |
| Package Height | 3.5 |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
| Polarity | NPN |
| Lens Shape Type | Domed |
| EU RoHS | Compliant |
| Maximum Dark Current (nA) | 100000 |
| Maximum Rise Time (ns) | 3000(Typ) |
| Maximum Collector Current (mA) | 20 |
| Maximum Fall Time (ns) | 3500(Typ) |
| Supplier Temperature Grade | Industrial |
| Package Length | 3 |
| Standard Package Name | Thin Type |
| Maximum Emitter-Collector Voltage (V) | 6 |
| Cut-Off Filter | Visible Cut-off |
| Pin Count | 2 |
| Mounting | Through Hole |
| Type | Chip |
| Half Intensity Angle Degrees (°) | 70 |
| Viewing Orientation | Side View |
| Peak Wavelength (nm) | 860 |
| Lens Color | Black |
| Package Width | 1.5 |
| Maximum Light Current (uA) | 750 |
