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MMBTH10LT1G
Semiconductor Technology

MMBTH10LT1G

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MMBTH10LT1G 规格参数
Overall Height0.035 inches minimum and 0.044 inches maximum
Inclosure Materialplastic
Maximum Operating Temp Per Measurement Point150.0 deg celsius junction
Overall Width0.0830 inches minimum and 0.0984 inches maximum
Departure From Cited Designatornot tape & reel
Voltage Rating In Volts Per Characteristic30.0 maximum collector to base voltage/static/emitter open
Overall Length0.1102 inches minimum and 0.1197 inches maximum
Terminal Type And Quantity3 bonding pad
Semiconductor Materialsilicon
Mounting Methodterminal
Power Rating Per Characteristic225.0 milliwatts small-signal input power, common-emitter peak
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