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MMBD301LT1G
Semiconductor Technology

MMBD301LT1G

SEMICONDUCTOR DEVICE,DIODE
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MMBD301LT1G 规格参数
Overall Height0.040 inches nominal
Inclosure Materialplastic
Current Rating Per Characteristic200.00 nanoamperes forward current, average peak
Maximum Operating Temp Per Measurement Point125.0 deg celsius junction
Overall Width0.051 inches nominal
Voltage Rating In Volts Per Characteristic30.0 maximum reverse voltage, average
Overall Length0.114 inches nominal
Terminal Type And Quantity3 pin
Semiconductor Materialsilicon
Mounting Methodterminal
Power Rating Per Characteristic200.0 milliwatts small-signal input power, common-collector absolute
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