| Typical Input Capacitance @ Vds (pF) | 590@100V |
| Configuration | Single Quad Drain Triple Source |
| Typical Turn-Off Delay Time (ns) | 38 |
| PCB changed | 8 |
| HTS | 8541.29.00.95 |
| Maximum Gate Source Leakage Current (nA) | 10000 |
| Number of Elements per Chip | 1 |
| ECCN (US) | EAR99 |
| Typical Rise Time (ns) | 7.8 |
| Maximum Power Dissipation (mW) | 52000 |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time (ns) | 11 |
| Automotive | No |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Package | Power Flat EP |
| Maximum IDSS (uA) | 1 |
| Typical Fall Time (ns) | 12 |
| Process Technology | MDmesh M2 |
| Package Height | 0.95(Max) |
| Channel Type | N |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 6.5 |
| Military | No |
| Maximum Drain Source Voltage (V) | 650 |
| Maximum Gate Source Voltage (V) | ±25 |
| Maximum Drain Source Resistance (mOhm) | 475@10V |
| Typical Gate Charge @ 10V (nC) | 17 |
| Standard Package Name | Power Flat |
| Pin Count | 8 |
| Mounting | Surface Mount |
| Lead Shape | No Lead |
| Part Status | Active |
| Product Category | Power MOSFET |
| Packaging | Tape and Reel |
| Maximum Gate Threshold Voltage (V) | 4 |
| Typical Gate Charge @ Vgs (nC) | 17@10V |
