首页/IRF640搜索结果/IRF640规格参数/
IRF640
STMicroelectronics

IRF640

Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220 Tube
中间价(CNY):0.0
推荐供应商
IRF640 规格参数
Typical Input Capacitance @ Vds (pF)1200@25V
ConfigurationSingle
PCB changed3
HTS8541.10.00.80
Number of Elements per Chip1
ECCN (US)EAR99
Typical Rise Time (ns)27
Maximum Power Dissipation (mW)125000
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)13
AutomotiveNo