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2N2222
STMicroelectronics

2N2222

Trans GP BJT NPN 30V 0.8A 500mW 3-Pin TO-18
中间价(CNY):0.8
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2N2222 规格参数
ConfigurationSingle
PCB changed3
HTS8541.21.00.75
Number of Elements per Chip1
Maximum Collector-Emitter Voltage (V)30
ECCN (US)EAR99
Maximum Power Dissipation (mW)500
Maximum Base Emitter Saturation Voltage (V)2.6@50mA@500mA|1.3@15mA@150mA
AutomotiveNo
Minimum Operating Temperature (°C)-65
Maximum Operating Temperature (°C)175