IMH11AT110 规格参数
Transistors - Bipolar (BJT) - Arrays, Pre-Biased | |
Other Names | IMH11AT110DKR |
Resistor - Emitter Base (R2) (Ohms) | 10k |
Frequency - Transition | 250MHz |
Datasheets | EMH11, UMH11N, IMH11A |
Online Catalog | NPN Pre-Biased Transistor Arrays |
Categories | Discrete Semiconductor Products |
Current - Collector (Ic) (Max) | 100mA |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Mounting Type | Surface Mount |
Voltage - Collector Emitter Breakdown (Max) | 50V |