| MSL Level | 3 |
| Maximum Operating Current | 30 mA |
| Max Processing Temp | 260 |
| Maximum Erase Time | 0.003/Block s |
| Maximum Programming Time | 0.7 ms |
| Product Dimensions | 12 x 18.4 x 1 mm |
| Density | 1 Gbit |
| Supplier Package | TSOP-I |
| Timing Type | Asynchronous |
| Address Bus Width | 28 Bit |
| Screening Level | Industrial |
| Typical Operating Supply Voltage | 3.3000 V |
| Interface Type | Parallel |
| Boot Block | No |
| Erase Suspend/Resume Modes Support | No |
| Number of Words | 128 MWords |
| Operating Temperature | -40 to 85 °C |
| ECC Support | Yes |
| Architecture | Sectored |
| Maximum Random Access Time | 20 ns |
| Block Organization | Symmetrical |
| Maximum Operating Supply Voltage | 3.6 V |
| Program Current | 30 mA |
| Number of Bits per Word | 8 Bit |
| HTSN: | 8542320051 |
| Cell Type | SLC NAND |
| Lead Finish | Matte Tin |
| Pin Count | 48 |
| Mounting | Surface Mount |
| SCHEDULE B: | 8542320050 |
| Simultaneous Read/Write Support | No |
| Minimum Operating Supply Voltage | 2.7 V |
| ECCN: | 3A991.B.1.A |
