UNR5115G0L 规格参数
Transistors - Bipolar (BJT) - Single, Pre-Biased | |
Other Names | UNR5115G0LDKR |
Resistor - Emitter Base (R2) (Ohms) | - |
Frequency - Transition | 80MHz |
Datasheets | UNR511xG Series |
Categories | Discrete Semiconductor Products |
Current - Collector (Ic) (Max) | 100mA |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
Mounting Type | Surface Mount |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Supplier Device Package | SMini3-F2 |