| Number of Channels per Chip | 1 |
| Fabrication Technology | NPN Transistor |
| PCB changed | 6 |
| Maximum Collector-Emitter Voltage (V) | 70 |
| ECCN (US) | EAR99 |
| Maximum Power Dissipation (mW) | 120 |
| Minimum Operating Temperature (°C) | -40 |
| Maximum Operating Temperature (°C) | 100 |
| Supplier Package | SMT |
| Phototransistor Type | Phototransistor |
| Package Height | 2.1(Max) |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.25 |
| Polarity | NPN |
| Lens Shape Type | Flat |
| EU RoHS | Compliant |
| Maximum Dark Current (nA) | 3 |
| Maximum Collector Current (mA) | 50 |
| Material | Silicon |
| Package Length | 4.2(Max) |
| Standard Package Name | SMD |
| Maximum Emitter-Collector Voltage (V) | 7 |
| Pin Count | 6 |
| Mounting | Surface Mount |
| Type | Chip |
| Half Intensity Angle Degrees (°) | 120 |
| Viewing Orientation | Top View |
| Part Status | Active |
| Peak Wavelength (nm) | 850 |
| Packaging | Tape and Reel |
| Package Width | 3.4(Max) |
