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MTB30P06VT4G
ON Semiconductor

MTB30P06VT4G

MTB30P06VT4G , P沟道 MOSFET 晶体管, 30 A, Vds=-60 V, 3针 D2PAK封装
中间价(CNY):9.105
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MTB30P06VT4G 规格参数
Typical Input Capacitance @ Vds (pF)1562@25V
ConfigurationSingle
Typical Turn-Off Delay Time (ns)98
PCB changed2
HTS8541.29.00.95
Maximum Gate Source Leakage Current (nA)100
Number of Elements per Chip1
ECCN (US)EAR99
Typical Rise Time (ns)25.9
Maximum Power Dissipation (mW)3000
Channel ModeEnhancement