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MMBT5551LT3G
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MMBT5551LT3G

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MMBT5551LT3G 规格参数
ConfigurationSingle
PCB changed3
HTS8541.21.00.95
Number of Elements per Chip1
Maximum Collector-Emitter Voltage (V)160
ECCN (US)EAR99
Maximum Power Dissipation (mW)300
Maximum Base Emitter Saturation Voltage (V)1@5mA@50mA|1@1mA@10mA
AutomotiveNo
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150