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MMBT3906LT1G
ON Semiconductor

MMBT3906LT1G

单晶体管 双极, 通用, PNP, -40 V, 250 MHz, 225 mW, -200 mA, 300 hFE
中间价(CNY):0.2018
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MMBT3906LT1G 规格参数
ConfigurationSingle
PCB changed3
HTS8541.29.00.95
Number of Elements per Chip1
Maximum Collector-Emitter Voltage (V)40
ECCN (US)EAR99
Maximum Power Dissipation (mW)300
Maximum Base Emitter Saturation Voltage (V)0.95@5mA@50mA|0.85@1mA@10mA
AutomotiveNo
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150