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MJ11032G
ON Semiconductor

MJ11032G

单晶体管 双极, 达林顿, NPN, 120 V, 300 W, 50 A, 18000 hFE
中间价(CNY):58.0836
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MJ11032G 规格参数
ConfigurationSingle
PCB changed2
HTS8541.29.00.95
Number of Elements per Chip1
Maximum Collector-Emitter Voltage (V)120
ECCN (US)EAR99
Maximum Power Dissipation (mW)300000
Maximum Base Emitter Saturation Voltage (V)3@200mA@25A|4.5@300mA@50A
AutomotiveNo
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)200