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MJ11012G
ON Semiconductor

MJ11012G

ON SEMICONDUCTOR  MJ11012G  单晶体管 双极, 达林顿, NPN, 60 V, 200 W, 30 A, 1000
中间价(CNY):3.0044
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MJ11012G 规格参数
ConfigurationSingle
PCB changed2
HTS8541.21.00.95
Number of Elements per Chip1
Maximum Collector-Emitter Voltage (V)60
ECCN (US)EAR99
Maximum Power Dissipation (mW)200000
Maximum Base Emitter Saturation Voltage (V)5@300mA@30A|3.5@200mA@20A
AutomotiveNo
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)200