MJ10012 规格参数
| Maximum Collector Base Voltage (V) | 600 |
| Maximum Collector Emitter Saturation Voltage (V) | 1.5@0.6A@3A|2@0.6A@6A|2.5@2A@10A |
| Taxonomy | Diodes, Transistors and Thyristors » Bipolar Transistors » Darlington BJT |
| Number of Elements per Chip | 1 |
| Package Width (mm) | 26.67(Max) |
| Maximum Emitter Base Voltage (V) | 8 |
| Maximum Power Dissipation (mW) | 175000 |
| Maximum Base Emitter Saturation Voltage (V) | 2.5@0.6A@6A|3@2A@10A |
| Standard Package Name | TO-3 |
| PCB | 2 |
| Minimum Operating Temperature (°C) | -65 |