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FQB34P10TM
ON Semiconductor

FQB34P10TM

晶体管, MOSFET, P沟道, -33.5 A, -100 V, 0.049 ohm, -10 V, -4 V
中间价(CNY):14.92
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FQB34P10TM 规格参数
Transistors - FETs, MOSFETs - Single
Online CatalogP-Channel MOSFET (Metal Oxide)
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds2910pF @ 25V
Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
Supplier Device PackageD²PAK (TO-263AB)
PCN Design/SpecificationDescription Chg 01/Apr/2016 Datasheet Update 05/Apr/2016 Logo 17/Aug/2017
Drain to Source Voltage (Vdss)100V
Power Dissipation (Max)3.75W (Ta), 155W (Tc)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TechnologyMOSFET (Metal Oxide)
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