FDV301N 规格参数
Transistors - FETs, MOSFETs - Single | |
PCN Assembly/Origin | SOT23 Manufacturing Source 31/May2013 Qualification of Manufacturing Source 25/Nov/2013 Assembly Site Add 21/Jul/2015 Wafer Fab Site Add 24/Nov/2016 Mult Devices 27/Sep/2017 |
Online Catalog | N-Channel MOSFET (Metal Oxide) |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 10V |
Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
Supplier Device Package | SOT-23 |
PCN Design/Specification | Mold Compound 12/Dec/2007 Logo 17/Aug/2017 |
Drain to Source Voltage (Vdss) | 25V |
Power Dissipation (Max) | 350mW (Ta) |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
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