Typical Input Capacitance @ Vds (pF) | 1385@15V |
Configuration | Single Quad Drain Triple Source |
Typical Turn-Off Delay Time (ns) | 30 |
PCB changed | 8 |
HTS | 8541.29.00.95 |
Number of Elements per Chip | 1 |
ECCN (US) | EAR99 |
Typical Rise Time (ns) | 6 |
Maximum Power Dissipation (mW) | 2500 |
Channel Mode | Enhancement |
Typical Turn-On Delay Time (ns) | 10 |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Supplier Package | SOIC |
Typical Fall Time (ns) | 12 |
Process Technology | TMOS |
Package Height | 1.5(Max) |
Maximum Positive Gate Source Voltage (V) | 25 |
Channel Type | P |
EU RoHS | Compliant |
Maximum Continuous Drain Current (A) | 8.8 |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±25 |
Maximum Drain Source Resistance (mOhm) | 20@10V |
Package Length | 4.9 |
Typical Gate Charge @ 10V (nC) | 28 |
Standard Package Name | SOP |
Maximum Diode Forward Voltage (V) | 1.2 |
Pin Count | 8 |
Mounting | Surface Mount |
Lead Shape | Gull-wing |
Part Status | Active |
Product Category | Power MOSFET |
Packaging | Tape and Reel |
Maximum Gate Threshold Voltage (V) | 3 |
Package Width | 3.9 |
Typical Gate Charge @ Vgs (nC) | 16@5V|28@10V |