| Transistors - FETs, MOSFETs - Single |
Online Catalog | N-Channel MOSFET (Metal Oxide) |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 6600pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 138nC @ 10V |
Supplier Device Package | TO-220-3 |
PCN Design/Specification | Logo 17/Aug/2017 |
Drain to Source Voltage (Vdss) | 75V |
Power Dissipation (Max) | 310W (Tc) |
Package / Case | TO-220-3 |
Technology | MOSFET (Metal Oxide) |
PCN Packaging | Tape and Box/Reel Barcode Update 07/Aug/2014 Mult Devices 24/Oct/2017 |
Manufacturer | ON Semiconductor |
Vgs (Max) | ±20V |
Other Names | FDP047AN08A0-ND FDP047AN08A0FS |
Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Datasheets | FD(P/I/H)047AN08A0 TO220B03 Pkg Drawing |
Categories | Discrete Semiconductor Products |
Product Training Modules | High Voltage Switches for Power Processing |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Standard Package | 50 |
Series | PowerTrench® |
Packaging | Tube |
Part Status | Not For New Designs |
Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |