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FDN352AP
ON Semiconductor

FDN352AP

晶体管, MOSFET, P沟道, -1.3 A, -30 V, 180 mohm, -10 V, -2 V
中间价(CNY):0.9061
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FDN352AP 规格参数
Transistors - FETs, MOSFETs - Single
Online CatalogP-Channel MOSFET (Metal Oxide)
FET TypeP-Channel
Input Capacitance (Ciss) (Max) @ Vds150pF @ 15V
Gate Charge (Qg) (Max) @ Vgs1.9nC @ 4.5V
Supplier Device PackageSuperSOT-3
PCN Design/SpecificationMold Compound 08/April/2008 Logo 17/Aug/2017
Drain to Source Voltage (Vdss)30V
Power Dissipation (Max)500mW (Ta)
Package / CaseTO-236-3, SC-59, SOT-23-3
TechnologyMOSFET (Metal Oxide)
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