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FDG6335N
ON Semiconductor

FDG6335N

双路场效应管, MOSFET, 双N沟道, 700 mA, 20 V, 0.18 ohm, 4.5 V, 1.1 V
中间价(CNY):1.76
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FDG6335N 规格参数
Transistors - FETs, MOSFETs - Arrays
Online CatalogN-Channel Logic Level Gate FETs
FET Type2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds113pF @ 10V
Gate Charge (Qg) (Max) @ Vgs1.4nC @ 4.5V
Supplier Device PackageSC-70-6
PCN Design/SpecificationMold Compound 12/Dec/2007 Mold Compound 07/May/2008 Logo 17/Aug/2017
Drain to Source Voltage (Vdss)20V
Package / Case6-TSSOP, SC-88, SOT-363
PCN PackagingBinary Year Code Marking 15/Jan/2014 Mult Devices 24/Oct/2017
ManufacturerON Semiconductor
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