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FDG6322C
ON Semiconductor

FDG6322C

ON Semiconductor 双 Si N/P沟道 MOSFET FDG6322C, 220 mA,410 mA, Vds=25 V, 6引脚 SOT-363 (SC-70)封装
中间价(CNY):1.0314
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FDG6322C 规格参数
Typical Input Capacitance @ Vds (pF)9.5@10V@N Channel|62@10V@P Channel
ConfigurationDual
Typical Turn-Off Delay Time (ns)4@N Channel|55@P Channel
PCB changed6
HTS8541.29.00.95
Number of Elements per Chip2
ECCN (US)EAR99
Typical Rise Time (ns)8@P Channel|4.5@N Channel
Maximum Power Dissipation (mW)300
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)7@P Channel|5@N Channel
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