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EMD4DXV6T1G
ON Semiconductor

EMD4DXV6T1G

Bipolar Transistors - Pre-Biased Dual Complementary NPN & PNP Digital
中间价(CNY):0.6412
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EMD4DXV6T1G 规格参数
PCN Assembly/OriginQualification Assembly/Test Site 25/Sep/2014 Wafer Source Addition 26/Nov/2014
CategoryDiscrete Semiconductor Products
Resistor - Emitter Base (R2) (Ohms)47k
Frequency - Transition-
DatasheetsEMD4DXV6
Current - Collector (Ic) (Max)100mA
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Mounting TypeSurface Mount
Voltage - Collector Emitter Breakdown (Max)50V
Supplier Device PackageSOT-563
PCN Design/SpecificationWire Bond 01/Dec/2010