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ECH8601M-TL-H
ON Semiconductor

ECH8601M-TL-H

ON Semiconductor ECH8601M-TL-H, 双 N沟道 MOSFET 晶体管, 8 A, Vds=24 V, 8针 ECH封装
中间价(CNY):1.6483
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ECH8601M-TL-H 规格参数
ConfigurationDual Dual Drain
Typical Turn-Off Delay Time (ns)3000
PCB changed8
Maximum Gate Source Leakage Current (nA)10000
Number of Elements per Chip2
ECCN (US)EAR99
Typical Rise Time (ns)1000
Maximum Power Dissipation (mW)1600
Channel ModeEnhancement
Typical Turn-On Delay Time (ns)300
AutomotiveNo