BC857BWT1G 规格参数
Transistors - Bipolar (BJT) - Single | |
Other Names | BC857BWT1GOSDKR |
Operating Temperature | -55°C ~ 150°C (TJ) |
PCN Assembly/Origin | Wafer Source Addition 26/Nov/2014 |
Frequency - Transition | 100MHz |
Datasheets | BC856B-58B |
Online Catalog | PNP Transistors |
Categories | Discrete Semiconductor Products |
Current - Collector (Ic) (Max) | 100mA |
Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
Mounting Type | Surface Mount |