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BC856BLT1G
ON Semiconductor

BC856BLT1G

Transistor PNP 65V 100mA hfe220 SOT23
中间价(CNY):0.2018
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BC856BLT1G 规格参数
ConfigurationSingle
PCB changed3
HTS8541.29.00.95
Number of Elements per Chip1
Maximum Collector-Emitter Voltage (V)65
ECCN (US)EAR99
Maximum Power Dissipation (mW)300
Maximum Base Emitter Saturation Voltage (V)0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA
AutomotiveNo
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150