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2N7002ET1G
ON Semiconductor

2N7002ET1G

晶体管, MOSFET, N沟道, 310 mA, 60 V, 0.86 ohm, 10 V, 1 V
中间价(CNY):0.3014
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2N7002ET1G 规格参数
Product Attributes Select All
Input Capacitance (Ciss) @ Vds26.7pF @ 25V
CategoryDiscrete Semiconductor Products
Online CatalogN-Channel Standard FETs
Gate Charge (Qg) @ Vgs0.81nC @ 5V
FET TypeMOSFET N-Channel, Metal Oxide
Supplier Device PackageSOT-23-3 (TO-236)
PCN Design/SpecificationGlue Mount Process 11/July/2008 Copper Wire 26/May/2009 SOT23 16/Sep/2016
Drain to Source Voltage (Vdss)60V
Package / CaseTO-236-3, SC-59, SOT-23-3
ManufacturerON Semiconductor