| Transistors - FETs, MOSFETs - Single |
| Other Names | 2N7000G-ND 2N7000GOS |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Datasheets | 2N7000 Datasheet |
| Categories | Discrete Semiconductor Products |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | TO-92-3 |
| Standard Package | 1,000 |
| Drain to Source Voltage (Vdss) | 60V |
| Series | - |
| Power Dissipation (Max) | 350mW (Tc) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Technology | MOSFET (Metal Oxide) |
| Manufacturer | ON Semiconductor |
| Packaging | Bulk |
| Part Status | Obsolete |
| Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
| PCN Obsolescence/ EOL | Multiple Devices 08/Nov/2014 Multiple Devices Revision 26/Nov/2014 |
