| Transistors - FETs, MOSFETs - Single |
Online Catalog | N-Channel MOSFET (Metal Oxide) |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | - |
Supplier Device Package | TO-92-3 |
PCN Design/Specification | Logo 17/Aug/2017 |
Drain to Source Voltage (Vdss) | 60V |
Power Dissipation (Max) | 400mW (Ta) |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Technology | MOSFET (Metal Oxide) |
PCN Packaging | Mult Devices 24/Oct/2017 |
Manufacturer | ON Semiconductor |
Vgs (Max) | ±20V |
Other Names | 2N7000-D26ZTR 2N7000_D26Z 2N7000_D26Z-ND 2N7000_D26ZTR 2N7000_D26ZTR-ND 2N7000D26Z |
PCN Part Number | Mult Device Part Number Chg 30/May/2017 |
Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Datasheets | 2N7000/02, NDS7002A Datasheet |
Categories | Discrete Semiconductor Products |
Product Training Modules | High Voltage Switches for Power Processing |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Standard Package | 2,000 |
Series | - |
Packaging | Tape & Reel (TR) |
Part Status | Active |
Current - Continuous Drain (Id) @ 25°C | 200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |