| Temperature Operating Range | -65 to +150 °C |
| Primary Type | Si |
| Configuration | Dual |
| Number of Elements per Chip | 2 |
| Voltage, Collector to Base | 60 V |
| Base Current | 120 mA |
| Transistor Type | PNP |
| Voltage, Collector to Emitter | 60 V |
| Current, Continuous Collector | 8 A |
| Voltage, Collector to Emitter, Saturation | 2 V |
| Number of Pins | 3 |
| Polarity | PNP |
| Height | 0.62" (15.75mm) |
| Maximum Operating Temperature | +150 °C |
| Width | 0.19" (4.82mm) |
| Voltage, Saturation, Base to Emitter | 4.5 V |
| Current, Collector Cutoff | 20 (Base), 20:200 (Emitter) μA |
| Output Current | 8 A |
| Dimensions | 10.28 x 4.82 x 15.75 mm |
| Input Voltage | 2.8 V |
| Product Header | Complementary Bipolar Silicon Medium Power Transistor |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | -65 °C |
| Resistance, Thermal, Junction to Ambient | 57 °C/W |
| Package Type | TO-220AB |
| Power Dissipation | 75 W |
| Series | 2N Bipolar Series |
| Type | Medium Power, Switch |
| Length | 0.404" (10.28mm) |
| Voltage, Emitter to Base | 5 V |
| Output Voltage | 60 V |
