| Temperature Operating Range | -65 to +200 °C |
| Primary Type | Si |
| Configuration | Common Base |
| Collector to Base Voltage | 80 V |
| Number of Elements per Chip | 1 |
| Collector Current | 25 A |
| Transistor Type | PNP |
| Resistance, Thermal, Junction to Case | 0.875 °C/W |
| Voltage, Breakdown, Collector to Emitter | 80 V |
| Voltage, Collector to Emitter, Saturation | 4 V |
| Number of Pins | 2 |
| Polarity | PNP |
| Height | 1.05" (26.67mm) |
| Maximum Operating Temperature | +200 °C |
| Width | 0.335" (8.51mm) |
| Voltage, Saturation, Base to Emitter | 2.5 V |
| Dimensions | 39.37 x 8.51 x 26.67 mm |
| Material | Si |
| Product Header | Complementary Silicon High Power Transistor |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | -65 °C |
| Operating Frequency | 4 MHz |
| Package Type | TO-204 |
| Power Dissipation | 200 W |
| Series | 2N Bipolar Series |
| Type | High Power |
| Collector to Emitter Voltage | 80 V |
| Length | 1.55" (39.37mm) |
| Emitter to Base Voltage | 5 V |
