2N2227/19

Northrop Grumman

2N2227/19

SEMICONDUCTOR DEVICE SET

中间价(CNY):-

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2N2227/19 规格参数

Features Provided	hermetically sealed case
Mounting Facility Quantity	1 all transistor
Thread Series Designator	unf all transistor
Inclosure Material	metal all transistor
Overall Diameter	1.230 inches minimum all transistor and 1.300 inches maximum all transistor
Nominal Thread Size	0.312 inches all transistor
Terminal Type And Quantity	2 pin all transistor and 1 threaded stud all transistor
Overall Length	0.915 inches nominal all transistor
Mounting Method	threaded stud all transistor
Internal Configuration	junction contact all transistor
Component Function Relationship	matched
Internal Junction Configuration	npn all transistor
Current Rating Per Characteristic	10.00 amperes source cutoff current maximum all transistor and 20.00 milliamperes zero-gate-voltage source current preset all transistor
Component Name And Quantity	2 transistor
Voltage Rating In Volts Per Characteristic	100.0 maximum breakdown voltage, collector-to-emitter, base open all transistor
Semiconductor Material	silicon all transistor
Power Rating Per Characteristic	150.0 watts small-signal input power, common-collector absolute all transistor
Joint Electronic Device Engineering Council/jedec/case Outline Designation	to-81 all transistor

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