| Typical Input Capacitance @ Vds (pF) | 31@10V |
| Configuration | Single |
| PCB changed | 3 |
| HTS | 8541.29.00.95 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Number of Elements per Chip | 1 |
| ECCN (US) | EAR99 |
| Maximum Power Dissipation (mW) | 830 |
| Channel Mode | Enhancement |
| Automotive | No |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Package | TO-236AB |
| Maximum IDSS (uA) | 1 |
| Process Technology | TMOS |
| Package Height | 1(Max) |
| Maximum Positive Gate Source Voltage (V) | 30 |
| Channel Type | N |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 0.3 |
| Military | No |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | 30 |
| Maximum Drain Source Resistance (mOhm) | 5000@10V |
| Package Length | 3(Max) |
| Maximum Diode Forward Voltage (V) | 1.2 |
| Pin Count | 3 |
| Mounting | Surface Mount |
| Part Status | Active |
| Product Category | Power MOSFET |
| Packaging | Tape and Reel |
| Maximum Gate Threshold Voltage (V) | 2.5 |
| Package Width | 1.4(Max) |
