| Transistors - FETs, MOSFETs - Single |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 5V |
| Supplier Device Package | 8-SO |
| Drain to Source Voltage (Vdss) | 30V |
| Power Dissipation (Max) | 2.5W (Ta) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Technology | MOSFET (Metal Oxide) |
| Manufacturer | NXP USA Inc. |
| Vgs (Max) | ±20V |
| PCN Obsolescence/ EOL | Multiple Devices 03/Jul/2013 |
| Other Names | 934056382518 SI4410DY /T3 SI4410DY /T3-ND |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Datasheets | SI4410DY |
| Categories | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 13.5 mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Standard Package | 2,500 |
| Series | TrenchMOS™ |
| Packaging | Tape & Reel (TR) |
| Part Status | Obsolete |
| Current - Continuous Drain (Id) @ 25°C | - |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
