BLL6H0514-25,112 规格参数
Mounting Style | SMD/SMT |
Output Power | 25 W |
Id - Continuous Drain Current | 50 mA |
Vgs - Gate-Source Breakdown Voltage | 13 V |
Transistor Polarity | N-Channel |
RoHS | Y |
Vds - Drain-Source Breakdown Voltage | 110 V |
Brand | NXP Semiconductors |
Operating Frequency | 0.5 GHz to 1.4 GHz |
Type | RF Power MOSFET |
Package / Case | SOT-467C-3 |