| Primary Type | Si |
| Configuration | Common Base |
| Temperature, Operating, Range | -55 to +150 °C |
| Number of Elements per Chip | 1 |
| Temperature, Operating, Maximum | +150 °C |
| Material Type | Silicon |
| Gain, DC Current, Maximum | 300 |
| Gain, DC Current, Minimum | 100 |
| Voltage, Collector to Base | 50 V |
| Transistor Type | NPN |
| Voltage, Collector to Emitter | 30 V |
| Current, Continuous Collector | 500 mA |
| Resistance, Thermal, Junction to Case | 83.3 °C/W |
| Device Dissipation | 0.625 W |
| Voltage, Breakdown, Collector to Emitter | 30 V |
| Voltage, Collector to Emitter, Saturation | 0.6 V |
| Number of Pins | 3 |
| Polarity | NPN |
| Height | 0.21" (5.33mm) |
| Width | 0.165" (4.2mm) |
| Temperature Range, Junction, Operating | -55 to +150 °C |
| Dimensions | 5.2 x 4.2 x 5.33 mm |
| Material | Si |
| Transistor Polarity | NPN |
| Frequency, Operating | 100 MHz |
| Mounting Type | Through Hole |
| Temperature, Operating, Minimum | -55 °C |
| Package Type | TO-92 |
| Power Dissipation | 625 mW |
| Type | Amplifier, Driver |
| Length | 0.204" (5.2mm) |
| Voltage, Emitter to Base | 5 V |
| Complement to | PNP |
| Current, Collector | 500 mA |
| Current, Gain | 100 |
| Thermal Resistance, Junction to Ambient | 200 °C⁄W |
| Brand/Series | Transistor Series |
